Title of the article ANALYSIS OF THE FEATURES OF THE STRESS-STRAIN STATE OF THE THIN SILICON WAFER DURING BLADE CUTTING PROCCES
Authors

MARMYSH Denis E., Ph. D. in Phys. and Math., Associate Professor of the Department of Theoretical and Applied Mechanics, Belarusian State University, Minsk, Republic of Belarus,  This email address is being protected from spambots. You need JavaScript enabled to view it.

BASINIUK Vladimir L., D. Sc. in Eng., Prof., Chief of the R&D Center “Mechanical Engineering Technologies and Processing Equipment” – Head of the Laboratory of Gearing Systems and Processing Equipment, Joint Institute of Mechanical Engineering of the NAS of Belarus, Minsk, Republic of Belarus, This email address is being protected from spambots. You need JavaScript enabled to view it.

TYCHINSKAYA Irina D., Researcher of the Laboratory of Gearing Systems and Processing Equipment of the R&D Center “Mechanical Engineering Technologies and Processing Equipment”, Joint Institute of Mechanical Engineering of the NAS of Belarus, Minsk, Republic of Belarus,  This email address is being protected from spambots. You need JavaScript enabled to view it.

In the section MECHANICS OF DEFORMED SOLIDS
Year 2026
Issue 2(75)
Pages 71–79
Type of article RAR
Index UDK 539.3
DOI https://doi.org/10.46864/1995-0470-2026-2-75-71-79
Abstract The article presents the modeling of the stress-strain state (SSS) of a thin silicon wafer during high-speed blade cubic boron nitride cutting process. The mathematical model of the system SSS is formulated, as well as a model of contact interaction between the wafer and the cutter. The mechanical and mathematical model is solved using the finite element method in ANSYS Workbench software package. The distribution of stress fields in the area of contact interaction is analyzed for various values of the cut-off wafer allowance. Patterns have been established that relate the amount of allowance to the normal stresses that occur during processing. Their analysis showed that with a decrease in the cut-off allowance from 20 to 1.5 μm, normal stresses also decrease. This may be due to the fact that at relatively small cutting depths, the angle of inclination of the contact segment between the plate and the cutter to the x axis decreases and the influence of stresses σxx on the stress state also decreases, while at the same time the influence of stresses σyy increases. Data on the experimental processing of three silicon wafer samples with preset cutting modes are presented. The numerical variation of the values of the average roughness Ra for all samples varies in the range of 0.25–0.55 μm, the sample with the largest amount of allowance has the highest numerical value for all the characteristics presented. A logarithmic scale with superposition of average values according to the characteristics Ra, Rq, Rsk, Rku, mathematical reconstruction of the 3D relief according to the parameters Rsk, Rku and the ratio of nominal to total area are shown.
Keywords silicon wafer, cubic boron nitride, stress-strain state, SSS, blade processing, numerical simulation
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